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Advantages of CVD SILICON CARBIDE®
in Semiconductor Processing
| Application |
Characteristic/Property |
Benefits |
|
Plasma Etch |
Low Etch Rate |
Longer component
life than quartz or silicon in flourine or chlorine based plasmas
Longer component life than reaction bonded or hot pressed SiC in flourine based plasma |
| High Purity(99.9995%+) |
No aluminum contamination issue as when using alumina components | |
| No sintering aid additives |
No metallic contamination caused by sintering aids as in Hot Pressed or direct sintered SiC | |
| Homogeneous
Structure, |
Low particle generation | |
| Low
Resistivity |
Useful for applications requiring RF coupling | |
|
Rapid Thermal Epitaxy |
High Purity(99.9995%+) |
No contamination of wafer or processing chamber |
| High
Thermal Conductivity |
High thermal
shock resistance
Excellent wafer temperature uniformity |
|
| High
Elastic Modulus High Specific Stiffness |
Allows very thin cross sections and low mass, resulting in increased wafer thru-put | |
| Elastic
Modulus nearly independent of Temp |
Flatness retained during and after high temp. use, aids in even heating and processing of wafer | |
| High Chemical Resistance |
Little or no degradation in 1000°C+ HCl or HF chamber cleaning cycles | |
| Solid, NOT A COATING |
Components cannot pin-hole as CVD coated graphite parts do, so lifetime of the component is extended and contamination of wafers is prevented | |
|
Rapid Thermal Processing |
High Purity(99.9995%+) |
No contamination of wafer or processing chamber |
| High
Thermal Conductivity |
High thermal shock resistance | |
| High
Elastic Modulus High Specific Stiffness |
Allows very thin cross sections and low mass, resulting in increased wafer thru-put | |
| Elastic
Modulus nearly independent of Temp |
Flatness retained during and after high temp. use, aids in uniform heating and processing of wafer |
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