CVD SILICON CARBIDE^®

Properties and Typical Values

Properties	Typical Values (Room Temperature)
Crystal Structure	FCC (face-centered cubic ß-phase) polycrystalline
Sublimation Temperature (degrees C)	~ 2700
Grain size (microns)	5 - 10
Density (grams per cc)	3.21
Hardness (kg per square mm)	-
- Knoop (500 g load)	2540
- Vickers (500 g load)	2500
Chemical Purity	>99.9995% SiC
Flexural Strength, 4-point (MPa/Ksi) Mil Std 1942 B	-
- At Room Temperature	470 / 68
- At 1400° C	575 / 84
Weibull Parameters	-
- Modulus, m	11.45
- Scale Factor, beta (Mpa/Ksi)	462 / 66
Fracture Toughness, KIC values	-
- Micro-indentation (MN m-1.5)	3.3
- Controlled Flow (MN m-1.5)	2.7
Elastic Modulus (GPa/106 psi)	-
- Sonic	466 / 68
- 4 point Flexure	461 / 67
Coefficient of Thermal Expansion (1/K)	-
- At Room Temperature	2.2 x 10-6
- Room Temperaure to 1000° C	4.0 x 10-6
Heat Capacity (J/Kg-K)	640
Thermal Conducitivy (W/m-K)	300
Poisson's Ratio	0.21
Polishability (Optical profilometer)	<3 Angstroms RMS
Electrical Resistivity	Low < 1 ohm-cm Standard 1-1000 ohm-cm High > 1000 ohm-cm

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Typical Trace Element Impurities in Parts per Billion by Weight using Gas Discharge Mass Spectrometry (GDMS) and Neutron Activation Analysis (NAA).

Element	GDMS	NAA	Element	GDMS	NAA
Li	<3.2	-	Rh	<3.6	-
Be	<5.9	-	Pd	<25	-
B	290	-	Ag	<20	<0.047
Na	30	0.63	Cd	<150	<0.57
Mg	<34	-	In	<22	<0.097
Al	9.1	-	Sn	<29	<4.1
P	28	-	Sb	<27	0.072
S	88	-	I	<63	-
K	<9.4	<21	Te	<26	-
Ca	<5.8	<840	Cs	<13	<0.0083
Sc	<0.64	<0.0006	Ba	<5.7	<2.2
Ti	<4.2	<1400	La	<1.2	<0.0062
Cr	-	0.16	Ce	<9.8	<0.038
V	<1.4	-	Eu	-	0.021
Mn	<3.9	-	Tb	-	<0.0004
Fe	<40	<5	Yb	-	<0.021
Co	<4.0	<0.67	Nd	<7.3	-
Ni	<13	205	Hf	<6.1	<0.0058
Cu	<16	1.55	Ta	-	<0.0057
Zn	<36	1.28	W	<12	0.688
Ga	<29	<0.16	Re	<5.3	-
Ge	<28	-	Os	<6.3	-
As	<9.4	5.70	Ir	<8.5	<0.0001
Se	<100	0.11	Pt	<9.6	<19
Br	-	<0.02	Au	-	0.028
Rb	<11	<0.36	Hg	<43	<0.02
Sr	<1.1	<3.9	Tl	<21	-
Y	<0.87	-	Pb	<7.1	-
Zr	<3.2	<4.5	Bi	<6.1	-
Nb	<3.5	-	Th	<0.61	<0.007
Mo	<17	0.28	U	<0.42	<0.039
Ru	<7.5	-	-	-	-

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