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CVD SILICON CARBIDE®
for Semiconductor Processing Components
Our bulk chemical vapor deposition (CVD) process produces the highest purity (>99.9995%) solid cubic beta SiC components for wafer processing and handling equipment. Free standing monolithic parts of solid CVD SILICON CARBIDE® offer superior chemical resistance, thermal conductivity, stiffness and thermal shock resistance. Components made of CVD SILICON CARBIDE® exhibit low particle generation, are free of graphite and other contaminants, and are useable at elevated temperatures (>1500°C). CVD SILICON CARBIDE® is available in both low (<10 Ohm-cm) and high (>1,000 Ohm-cm) electrical resistivity grades.
CVD SILICON CARBIDE® is resistant to degradation and etching due to flourine, chlorine, bromine based plasmas, electron beam, atomic oxygen, acids and bases. Due to its chemical inertness, CVD SILICON CARBIDE® components can be cleaned repeatedly in hydrochloric acid, sulfuric acid, nitric acid and HF solutions without loss of dimensional accuracy. In addition, in-situ etching of semiconductor processing chambers with hydrochloric acid can be performed at elevated temperatures without degrading the wafer support components made of CVD SILICON CARBIDE®.
Some current semiconductor applications where CVD SILICON CARBIDE® is being used include wafer support components such as susceptors, slip rings, lift pins, electrodes, focus rings, chamber liners and other components for processes such as RTP; plasma etch; CVD; Epi; ion implant; lithography; and dry, vapor-phase and wet cleaning.
CVD SILICON CARBIDE®
and Competing Material Properties Comparison
Typical Material Properties
| Material |
Purity |
Porosity |
Density |
Flexural
Strength |
Elastic
Modulus |
CTE |
Thermal
Conduct. |
| CVD SILICON CARBIDE | 99.9995+ |
None |
3.21 |
68 |
466 |
4.0 |
300 |
| HP SiC | 97 to 99 |
< 1 |
3.20 |
75 to 109 |
450 |
4.5 |
130 to 180 |
| RB SiC | 99+ |
<1 |
3.08 |
33 |
393 |
4.5 |
125 |
| Direct Sinter SiC | 99 |
4 |
3.10 |
55 |
410 |
4.0 |
125 |
| HP Alumina | 99.5 |
<1 |
3.95 |
80 |
380 |
8.2 |
40 |
| Sintered Alumina |
99.5 to 99.8 |
1 to 2 |
3.86 to 3.9 |
45 to 52 |
350 to 370 |
7.4 to 8.2 |
30 |
| Sintered SiN | 98.8 |
<1 |
3.20 |
102 |
310 |
3.2 |
35 |
| HP SiN | 99+ |
<1 |
3.15 to 3.18 |
93 to 116 |
310 |
3.2 to 3.5 |
40 |
| HP AlN | 96 to 99.9 |
<1 |
3.25 |
44 to 62 |
310 to 330 |
4.3 to 5.0 |
80 to 150 |
| Quartz | 99.98+ |
<1 |
2.2 |
15 |
70 |
0.5 |
1.4 to 2.5 |
| Poly Silicon | 99.999+ |
None |
2.3 |
110 |
3.8 |
150 |
HP = Hot Pressed or Hot Isostatic Pressed
RB = Reaction Bonded with Si Metal
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