CVD SILICON CARBIDE® - Engineered to Perform™

1. J.S. Goela, R.D. Jaworski and R.L. Taylor, Method to Prevent
Backside Growth on Substrates in a Vapor Deposition System, U.S. Patent
#4,963,393 (October 16, 1990).

2. J. Keeley, J.S. Goela, M.A. Pickering and R.L. Taylor, Selective
Area Chemical Vapor Deposition, U.S. Patent #4,990,374 (February 5, 1991).

3. M.A. Pickering, J. Keeley and R.L. Taylor, Chemical Vapor
Deposition Process to Replicate the Finish and/or Figure of Preshaped
Structures, US Patent #4,997,678 (March 5, 1991).

4. J.S. Goela and R.L. Taylor, Fabrication of Lightweight Ceramic
Mirrors by Means of a Chemical Vapor Deposition Process, US Patent
#5,071,596 (December 10, 1991).

5. J.S. Goela, M.A. Pickering and R.L. Taylor, Method of Fabricating
Lightweight Honeycomb Structures, US Patent #5,150,507 (September 29,
1992).

6. J. S. Goela, L.E. Burns, A. Teverovsky, and J. MacDonald, A
Triangular Deposition Chamber for a Vapor Deposition System, US Patent
#5,354,580 (Oct. 11, 1994).

7. M.A. Pickering, J.S. Goela, L.E. Burns, Highly Polishable, Highly
Thermally Conductive SiC, Method of Preparation and Applications Thereof,
US Patent #5,374,412 (Dec. 20, 1994).

8. M.A. Pickering, J.S. Goela, L.E. Burns, Hard Disc Drives and
Read/Write Heads Formed from Highly Thermally Conductive Silicon Carbide,
US Patent #5,465,184 (Nov. 7, 1995).

9. M.A. Pickering, J.S. Goela, L.E. Burns, Chemical Vapor Deposition
Furnace and Furnace Apparatus, US Patent #5,474,613 (Dec. 12, 1995).

10. M.A. Pickering, L.E. Burns, Susceptor For Semiconductor Wafer
Processing, US Patent #5,584,936 (Dec. 17, 1996).

11. J.S. Goela, L.E. Burns, R. L. Taylor, Chemical Vapor
Deposition-Produced Silicon Carbide Having Improved Properties, US Patent
#5,604,151 (Feb. 18, 1997).

12. K. F. Tulloch, L.E. Burns, H.D. Desai, R.L. Taylor, Composite
Thermocouple Protection Tubes, US Patent #5,618,594 (Apr. 8, 1997)

1. J.S. Goela and R.L. Taylor, Large Scale Chemical Vapor Deposition,
Proceedings of the 1987 ASME/JSME Thermal Engineering Joint Conference,
Vol. 1, P.J. Marto and I. Tanasawa, editors (The American Society of
Mechanical Engineers, New York, N.Y., 1987), p. 623.

2. J.S. Goela and R.L. Taylor, Monolithic Material Fabrication by
Chemical Vapor Deposition, J. Mat. Science 23 (1988) 4331-4339.

3. M.A. Pickering and R.L. Taylor, Large, Lightweight, High
Performance CVD Silicon Carbide (SiC) Mirrors, Proceedings of Topical
Meeting on High Power Laser Optical Components, 24-25 Oct 1988, Part 1,
Unclassified Papers; NWC TP 7017, Part 1, Naval Weapons Center, China Lake,
CA (July 1989), p. 259.

4. J.S. Goela and R.L. Taylor, Chemical Vapor Deposition for Silicon
Cladding on Advanced Ceramics, J. Am. Ceram. Soc. 72 (1989) 1747-1750.

5. J.S. Goela and R.L. Taylor, Rapid Fabrication of Lightweight
Ceramic Mirrors by Chemical Vapor Deposition, Appl. Phys. Lett. 54, 25,
(1989) 2512-14.

6. J.S. Goela and R.L. Taylor, Fabrication of Light-Weighted Si/SiC
LIDAR Mirrors, Proc. SPIE 1062 (1989) 37-49.

7. J.S. Goela and R.L. Taylor, CVD Replication for Optics
Applications, Proc. SPIE, 1947 (1989) 198-210.

8. J.S. Goela and R.L. Taylor, Large Scale Fabrication of Lightweight
Si/SiC LIDAR Mirrors, Proc. SPIE, 1118 (1989) 14-24.

9. M.A. Pickering, R.L. Taylor, J. Keeley and G. Graves, Chemically
Vapor Deposited Silicon Carbide (SiC) for Optical Applications, Proc.
SPIE, 1118 (1989) 2-13.

10. A. Collins, J. Keeley, M.A. Pickering and R.L. Taylor,
Investigation of CVD ß-SiC Surfaces Produced via a "Novel "Surface
Replication Process, presented at MRS Boston (1989); Mat. Res. Soc. Symp. L
Proc., 168 (1990) 193-197.

11. M.A. Pickering and R.L. Taylor, Fabrication of Large, Lightweight
CVD-SiC Mirror Substrates, presented at RADC large Optics Conference,
Griffiss AFB, NY, 26-28 June 1990. Report No. RL-TR-91-149, Vol 1.,pg. H1.

12. J.S. Goela, M.A. Pickering, R.L. Taylor, B.W. Murray and A.
Lompado, Chemically Vapor Deposited Silicon and Silicon Carbide Optical
Substrates for Severe Environments, Proc. SPIE, 1330 (1990) 25-38.

13. A.K. Collins, M.A. Pickering and R.L. Taylor, Grain Size
Dependence of the Thermal Conductivity of Polycrystalline CVD ß-SiC at Low
Temperature, J. Appl. Phys., 68 (12), (1990) 6510-6512.

14. M.A. Pickering, R.A. Taylor and J.T. Keeley, Chemically Vapor
Deposited Silicon Carbide (SiC) for Optical Applications, Proceedings of
the 7th National Conference on Synchrotron Radiation Instrumentation,
Berkeley, CA, August 1989; published in Nuclear Instrum. Methods in Phys.
Res., A291 (1990) 95-100.

15. W.R. Haigis, CVD Silicon Carbide: Alternative for Designers: The
battle between silicon carbide and beryllium in the optics world heats up.,
Lasers & Optronics, January (1992).

16. J.S. Goela, M.A. Pickering, R.L. Taylor, B.W. Murray and A.
Lompado, Properties of Chemical Vapor Deposited SiC for Optics Applications
in Severe Environments., Appl. Opt., 30 (1991) 3166-75.

17. J.S. Goela, M.A. Pickering and R.L. Taylor, Wavelength Dependence
of Scatter in Chemical Vapor Deposited SiC, Proc. SPIE, 1753 (1992) 77-89.

18. W.R. Haigis, M.A. Pickering, CVD Scaled Up for Commercial
Production of Bulk SiC, American Ceramic Soc. Bulletin, 72 (1993) 74-78.

19. M.A. Pickering, R.L. Taylor, J.S. Goela and H. Desai, Effect of
Process Conditions and Chemical Composition on the Microstructure and
Properties of Chemically Vapor Deposited SiC, Si, ZnSe, ZnS and ZnSxSe1-x, Chemical Vapor Deposition of Refractory Metals and Ceramics II, ed. T.M.
Bresmann, et al., Mat. Res. Soc. Symp. Proc., 250 (1992) 145-60.

20. W.R. Haigis and M.A. Pickering, Monolithic ß SiC parts produced by
CVD, Materials & Design, 14 (1993) 130-132.

21. J.S. Goela and R.L. Taylor, Transparent Chemical Vapor Deposited
ß-SiC, Appl. Phys. Lett., 64 (1994) 131-133.

22. J.S. Goela and R.L. Taylor, Transparent SiC for Mid-IR Windows and
Domes, Proc. SPIE, 2286 (1994 ) 46-59.

23. Y. Kim, A. Zangvil, J.S. Goela and R.L. Taylor, Microstructure of
Transparent SiC from Chemical Vapor Deposition, Inst. Phys. Conf. Ser. No.
137, Chapter 6, pp. 569, IOP Publishing LTD (1994).

24. M.A. Pickering, W.R. Haigis, CVD SILICON CARBIDE, Laser &
Optronics, March 1994

25. Y. Kim, A. Zangvil, J.S. Goela and R.L. Taylor, Microstructure
Comparison of Transparent and Opaque CVD SiC, J. Am. Ceram. Soc., 78
(1995) 1571-1579.

26. N. Geril, L. Grigley, S. Wilson and J.S. Goela, Thin Shell Replication
of Grazing Incident (Wolter Type I) SiC Mirrors, SPIE Proc., 2478 (1995)
215-227.

27. J.S. Goela, M.A. Pickering and R.L. Taylor, Chemical Vapor
Deposited ß-SiC for Optics Applications, Mat. Res. Soc. Symp. K Proc.,
363 (1995) 71-87.

28. J.S. Goela, H.D. Desai, R. L. Taylor and S.E. Olson, Thermal Stability
of CVD-SiC Lightweight Optics, SPIE Proc., 2543 (1995) 38-48.

29. H. Wang, R.N. Singh, J.S. Goela, Effects of Postdeposition
Treatments on the Mechanical Properties of a Chemical-Vapor-Deposited
Silicon Carbide, J. Am. Ceram. Soc., 78 (1995) 2437-42.

30. J.S. Goela, M.A. Pickering, L.E. Burns, Chemical Vapor Deposited SiC
for High Heat Flux Applications, SPIE Proc., 2855 (1996) 2-13.

1. J.S. Goela and R.L. Taylor, Fabrication of Lightweight LIDAR
Mirrors, NASA SBIR Phase I Final Report, CVD Incorporated Technical Report
No. 9069-1 (March 1987).

2. M.A. Pickering and R.L. Taylor, Fabrication of Large Mirror
Substrates by Chemical Vapor Deposition, Final Technical Report, No.
AFWAL-TR-87-4016, Materials Laboratory, AF Wright Aeronautical
Laboratories, Wright Patterson AFB, OH 45433-6533 (April 1987).

3. J.S. Goela and R.L. Taylor, Fabrication of Lightweight Si/SiC LIDAR
Mirrors, NASA Contractorís Report No. 4389, NASA Langley Research Center
(August 1991).

4. M.A. Pickering and R.L. Taylor, Fabrication of Large Mirror
Substrates by Chemical Vapor Deposition, Interim Report, No. RL-TR-92-276,
Rome Laboratory, Griffiss AFB, NY 13441-5700 (December 1992).

5. J.S. Goela and M.A. Pickering, Silicon Carbide Mirror Substrate
Replication by Chemical Vapor Deposition, Final Technical Report, No.
RL-TR-94-155, Rome Laboratory, Griffiss AFB, NY 13441-4515 (September
1994). Restricted Access